¡El SiC769ACD is an integrated solution that contains PWM optimized n-channel MOSFETs (high side and low side) and a full featured MOSFET driver IC. ¡El device complies with the Intel DrMOS standard for desktop and server Vcore power stages. ¡El SiC769ACD delivers up to 35 A continuous output current and operates from an input voltage range of 3 V to 16 V. ¡El integrated MOSFETs are optimized for output voltages in the ranges of 0.8 V to 2.0 V with a nominal input voltage of 12 V. ¡El device can also deliver very high power at 5 V output for ASIC applications. ¡El SiC769ACD incorporates an advanced MOSFET gate driver IC. This IC accepts a single PWM input from the VR controller and converts it into the high side and low side MOSFET gate drive signals. ¡El driver IC is designed to implement the skip mode (SMOD) function for light load efficiency improvement. Adaptive dead time control also works to improve efficiency at all load points. The SiC769ACD has a thermal warning (THDN) that alerts the system of excessive junction temperature. ¡El driver IC includes an enable pin, UVLO and shoot through protection. ¡El SiC769ACD is optimized for high frequency buck applications. Operating frequencies in excess of 1 MHz can easily be achieved. ¡El SiC769ACD is packaged in Vishay Siliconix high performance PowerPAK MLP6 x 6 package. Compact co-packaging of components helps to reduce stray inductance, and hence increases efficiency.